| IPB017N06N3 G | |
|---|---|
| Part Number | IPB017N06N3 G |
| Manufacturer | International Rectifier (Infineon Technologies) |
| Description | IPB017N06N3 G Infineon Technologies |
| Quantity Available | 4000 pcs new original in stock. Request Stock & Quotation |
| ECAD Model | |
| Datasheets | |
| Download | IPB017N06N3 G Details PDF |
| IPB017N06N3 G Price |
Request Price & Lead Time Online or Email us: Info@ariat-tech.com |
| Technical Information of IPB017N06N3 G | |||
|---|---|---|---|
| Manufacturer Part Number | IPB017N06N3 G | Category | Discrete Semiconductor |
| Manufacturer | International Rectifier (Infineon Technologies) | Description | IPB017N06N3 G Infineon Technologies |
| Package / Case | TO-263 | Quantity Available | 4000 pcs |
| Vgs(th) (Max) @ Id | 4V @ 196µA | Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) | Supplier Device Package | PG-TO263-7 |
| Series | OptiMOS™ | Rds On (Max) @ Id, Vgs | 1.7 mOhm @ 100A, 10V |
| Power Dissipation (Max) | 250W (Tc) | Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) | Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Input Capacitance (Ciss) (Max) @ Vds | 23000pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs | 275nC @ 10V | FET Type | N-Channel |
| FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 60V | Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Download | IPB017N06N3 G PDF - DE.pdf | ||
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