NTGS5120PT1G
Part Number NTGS5120PT1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET P-CH 60V 1.8A 6-TSOP
Quantity Available 70000 pcs new original in stock.
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Datasheets NTGS5120PT1G.pdf
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Technical Information of NTGS5120PT1G
Manufacturer Part Number NTGS5120PT1G Category Discrete Semiconductor
Manufacturer AMI Semiconductor / ON Semiconductor Description MOSFET P-CH 60V 1.8A 6-TSOP
Package / Case SOT23-6 Quantity Available 70000 pcs
Vgs(th) (Max) @ Id 3V @ 250µA Vgs (Max) ±20V
Technology MOSFET (Metal Oxide) Supplier Device Package 6-TSOP
Series - Rds On (Max) @ Id, Vgs 111 mOhm @ 2.9A, 10V
Power Dissipation (Max) 600mW (Ta) Packaging Original-Reel®
Package / Case SOT-23-6 Other Names NTGS5120PT1GOSDKR
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 39 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 942pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 18.1nC @ 10V FET Type P-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 60V Detailed Description P-Channel 60V 1.8A (Ta) 600mW (Ta) Surface Mount 6-TSOP
Current - Continuous Drain (Id) @ 25°C 1.8A (Ta)  
DownloadNTGS5120PT1G PDF - DE.pdfNTGS5120PT1G PDF - FR.pdfNTGS5120PT1G PDF - ES.pdfNTGS5120PT1G PDF - IT.pdfNTGS5120PT1G PDF - KR.pdf
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