FDP027N08B
Part Number FDP027N08B
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 80V 223A TO-220-3
Quantity Available 31500 pcs new original in stock.
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Datasheets FDP027N08B.pdf
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Technical Information of FDP027N08B
Manufacturer Part Number FDP027N08B Category Discrete Semiconductor
Manufacturer AMI Semiconductor / ON Semiconductor Description MOSFET N-CH 80V 223A TO-220-3
Package / Case Tube Quantity Available 31500 pcs
Vgs(th) (Max) @ Id 4.5V @ 250µA Vgs (Max) ±20V
Technology MOSFET (Metal Oxide) Supplier Device Package TO-220-3
Series PowerTrench® Rds On (Max) @ Id, Vgs 2.7 mOhm @ 100A, 10V
Power Dissipation (Max) 246W (Tc) Packaging Tube
Package / Case TO-220-3 Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 13530pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 178nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 80V Detailed Description N-Channel 80V 120A (Tc) 246W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C 120A (Tc)  
DownloadFDP027N08B PDF - DE.pdfFDP027N08B PDF - FR.pdfFDP027N08B PDF - ES.pdfFDP027N08B PDF - IT.pdfFDP027N08B PDF - KR.pdf
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