FDB33N25TM
Part Number FDB33N25TM
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 250V 33A D2PAK
Quantity Available 28000 pcs new original in stock.
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Datasheets FDB33N25TM.pdf
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Technical Information of FDB33N25TM
Manufacturer Part Number FDB33N25TM Category Discrete Semiconductor
Manufacturer AMI Semiconductor / ON Semiconductor Description MOSFET N-CH 250V 33A D2PAK
Package / Case TO-263 Quantity Available 28000 pcs
Vgs(th) (Max) @ Id 5V @ 250µA Vgs (Max) ±30V
Technology MOSFET (Metal Oxide) Supplier Device Package D²PAK
Series UniFET™ Rds On (Max) @ Id, Vgs 94 mOhm @ 16.5A, 10V
Power Dissipation (Max) 235W (Tc) Packaging Tape & Reel (TR)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Other Names FDB33N25TMTR
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 19 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 2135pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 250V Detailed Description N-Channel 250V 33A (Tc) 235W (Tc) Surface Mount D²PAK
Current - Continuous Drain (Id) @ 25°C 33A (Tc)  
DownloadFDB33N25TM PDF - DE.pdfFDB33N25TM PDF - FR.pdfFDB33N25TM PDF - ES.pdfFDB33N25TM PDF - IT.pdfFDB33N25TM PDF - KR.pdf
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