| IPD60R600P6 | |
|---|---|
| Part Number | IPD60R600P6 |
| Manufacturer | Infineon Technologies |
| Description | MOSFET N-CH 600V 7.3A TO252-3 |
| Quantity Available | 16060 pcs new original in stock. Request Stock & Quotation |
| Datasheets | 1.IPD60R600P6.pdf2.IPD60R600P6.pdf3.IPD60R600P6.pdf4.IPD60R600P6.pdf |
| Download | IPD60R600P6 Details PDF |
| IPD60R600P6 Price |
Request Price & Lead Time Online or Email us: Info@ariat-tech.com |
| Technical Information of IPD60R600P6 | |||
|---|---|---|---|
| Manufacturer Part Number | IPD60R600P6 | Category | Discrete Semiconductor |
| Manufacturer | Cypress Semiconductor (Infineon Technologies) | Description | MOSFET N-CH 600V 7.3A TO252-3 |
| Package / Case | PG-TO252-3 | Quantity Available | 16060 pcs |
| Vgs(th) (Max) @ Id | - | Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) | Supplier Device Package | PG-TO252-3 |
| Series | CoolMOS™ P6 | Rds On (Max) @ Id, Vgs | 600mOhm @ 2.4A, 10V |
| Product Status | Discontinued at Digi-Key | Power Dissipation (Max) | 63W (Tc) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | Package | Tape & Reel (TR) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 557 pF @ 100 V | Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| FET Type | N-Channel | FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) | Base Product Number | IPD60R |
| Download | IPD60R600P6 PDF - DE.pdfIPD60R600P6 PDF - FR.pdfIPD60R600P6 PDF - ES.pdfIPD60R600P6 PDF - IT.pdfIPD60R600P6 PDF - KR.pdf | ||
Product Model
IPD60R600P6
Introduction
MOSFET Power Transistor
Brand and Manufacturer
Infineon Technologies, formerly International Rectifier
Features
CoolMOS P6 Technology
N-Channel Enhancement Mode
Low On-resistance
High Blocking Voltage Capability
Fast Switching Performance
Product Performance
Efficient Power Conversion
Stable Operation in High Temperature Environments
Low Conduction and Switching Losses
Technical Specifications
Metal Oxide Semiconductor (MOSFET)
Surface Mount Technology
600V Drain to Source Voltage
3A Continuous Drain Current
600 mOhm Rds On Resistance
Dimensions, Shape, and Packaging
TO-252-3, DPAK Package
Surface Mount Type
Lead Free, RoHS Compliant
Tape & Reel Packaging for Automated Assembly
Quality and Reliability
High Robustness and Longevity
63W Power Dissipation Capacity
Product Advantages
Energy-saving Power Conversion
Optimized for High Voltage Applications
Product Competitiveness
Leadership in Power Semiconductor Market
Innovative CoolMOS P6 Series for Superior Performance
Compatibility
Designed for General-purpose Power Switching
Standard Certification and Compliance
RoHS Compliant for Environmental Standards
Lifespan and Sustainability
Long Operational Life at Elevated Temperatures
Eco-friendly due to Lead-free Composition
Actual Application Fields
Power Supplies
Lighting Systems
Motor Controls
Inverter Circuits
Email us: Info@Ariat-Tech.com or RFQ IPD60R600P6 Online.
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| IPD60R600P6 Image | IPD60R600P6 Picture | IPD60R600P6 PDF |
| IPD60R600P6 Datasheet | Download IPD60R600P6 Datasheet | Manufacturer Cypress Semiconductor (Infineon Technologies) |
