Manufacturer Part Number

IPD60R600CP

Description

This is an N-channel power MOSFET made by Infineon, designed for switching and amplification in high-voltage circuits. It can handle up to 600V drain-source and a continuous drain current of 6.1A. The device operates efficiently in demanding applications due to its low on-resistance and high power dissipation capability. Comes in a TO-252-3 surface mount package and is RoHS compliant. Supplied on tape & reel for automated production processes.

Specifications

Drain to Source Voltage: 600V

Continuous Drain Current (Id): 6.1A

On Resistance (RDS(on)): 600mΩ at Vgs = 10V

Power Dissipation: 60W

Gate Threshold Voltage: 3.5V at 220µA

Input Capacitance (Ciss): 550pF

Output Capacitance (Coss): 28pF

Reverse Transfer Capacitance (Crss): 67pF at Vds = 480V

Gate Charge (Qg): 27nC at Vgs = 10V

Operating Temperature: -55°C to +150°C

Package: TO-252-3 (DPAK)

RoHS Compliant

Device Structure

Single N-channel MOSFET with enhancement mode. Three terminals: Gate, Drain, Source. Compact surface mount TO-252-3 plastic package suitable for PCB assembly.

Performance Characteristics

High blocking voltage (600V) for use in power electronics. Moderate continuous drain current (6.1A) supports medium power loads. Low gate threshold voltage (3.5V) allows efficient operation with lower drive voltage. Low gate charge (27nC) provides fast switching and improved efficiency. Good thermal capability with 60W maximum dissipation.

Application Environments

Power management circuits

Switching regulators

Motor drivers

Power supplies

DC-DC converters

Lighting ballasts

Industrial control and automation equipment

Consumer electronics

Suitable for environments requiring compact, efficient high-voltage switching

Selection Guidelines

Choose this MOSFET when the application requires handling up to 600V and 6.1A, with efficient switching and moderate thermal demands. Make sure the maximum voltage and current meet or exceed your circuit requirements. Check if the TO-252-3 package fits your PCB layout. Consider drive capability and switching speed based on gate charge and capacitance.

Usage Considerations

Proper heat sinking or PCB thermal management is needed to handle up to 60W dissipation. Ensure the gate voltage and drive circuit can provide enough power for fast switching (watch out for gate charge and threshold voltage). Protect against voltage spikes exceeding 600V which may damage the device. Observe correct polarity; N-channel type means the source is typically grounded. Keep within safe operating temperature (-55°C to +150°C). Use appropriate ESD precautions to avoid handling damage. Verify lead-free/RoHS compatibility for green designs.

Potential Equivalent/Replacement Models

Infineon alternatives:

IPD60R580P

IPD60R380P

Other manufacturers with similar specs:

STMicroelectronics STP6N60M2

ON Semiconductor FDP6N60

Vishay SiHF600N60

Parameter differences may exist; check datasheets to confirm suitability. If no direct equivalents match exact specifications (600V, 6.1A, TO-252 package), please contact our website Ariat-Tech sales team for detailed replacement options and technical support.

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