| AOTF18N65 | |
|---|---|
| Part Number | AOTF18N65 |
| Manufacturer | Alpha & Omega Semiconductor Inc. |
| Description | MOSFET N-CH 650V 18A TO220-3F |
| Quantity Available | 10326 pcs new original in stock. Request Stock & Quotation |
| Datasheets | 1.AOTF18N65.pdf2.AOTF18N65.pdf3.AOTF18N65.pdf4.AOTF18N65.pdf5.AOTF18N65.pdf6.AOTF18N65.pdf7.AOTF18N65.pdf |
| Download | AOTF18N65 Details PDF |
| AOTF18N65 Price |
Request Price & Lead Time Online or Email us: Info@ariat-tech.com |
| Technical Information of AOTF18N65 | |||
|---|---|---|---|
| Manufacturer Part Number | AOTF18N65 | Category | Discrete Semiconductor |
| Manufacturer | Alpha and Omega Semiconductor, Inc. | Description | MOSFET N-CH 650V 18A TO220-3F |
| Package / Case | TO-220F | Quantity Available | 10326 pcs |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA | Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) | Supplier Device Package | TO-220F |
| Series | - | Rds On (Max) @ Id, Vgs | 390mOhm @ 9A, 10V |
| Power Dissipation (Max) | 50W (Tc) | Package / Case | TO-220-3 Full Pack |
| Package | Tube | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Input Capacitance (Ciss) (Max) @ Vds | 3785 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V | FET Type | N-Channel |
| FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 650 V | Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Base Product Number | AOTF18 | ||
| Download | AOTF18N65 PDF - DE.pdfAOTF18N65 PDF - FR.pdfAOTF18N65 PDF - ES.pdfAOTF18N65 PDF - IT.pdfAOTF18N65 PDF - KR.pdf | ||
Manufacturer Part Number
AOTF18N65
Description
N-channel MOSFET designed for high-voltage switching with low on-resistance, featuring a maximum drain-source voltage of 650V and a continuous drain current of 18A. Package type is TO-220-3 Full Pack (TO-220F), optimized for efficient heat dissipation and reliable operation in demanding environments. The device supports high-speed switching, high efficiency, and robust voltage tolerance. Fully RoHS3 compliant and REACH unaffected, making it suitable for modern electronic designs.
Specifications
Type: N-Channel MOSFET
Maximum Drain-Source Voltage (Vdss): 650 V
Maximum Continuous Drain Current (Id @ 25°C): 18A
Maximum Rds(on): 390 mΩ @ 9A, 10V
Gate Threshold Voltage (Vgs(th)): Maximum 4.5V @ 250µA
Input Capacitance (Ciss): 3785 pF @ 25V
Gate Charge (Qg): 68 nC @ 10V
Drive Voltage: 10V
Maximum Gate-Source Voltage: ±30V
Maximum Power Dissipation: 50W (Tc)
Operating Junction Temperature: -55°C to +150°C
Mounting: Through Hole
Package: TO-220-3 Full Pack (TO-220F)
RoHS3 Compliant, REACH Unaffected
Moisture Sensitivity Level: MSL 1 (Unlimited)
HTSUS: 8541.29.0095
ECCN: EAR99
Device Structure
Three-terminal N-channel enhancement mode MOSFET
Planar silicon structure, low on-resistance path from drain to source
TO-220-3 Full Pack through-hole package with isolated tab for easier mounting and heat management
Performance Characteristics
Supports high-speed, efficient switching at up to 650V
Handles continuous currents up to 18A, suitable for high-power loads
Low Rds(on) lowers conduction losses, leading to better efficiency
Can tolerate gate voltages up to 30V (positive and negative)
Withstands power dissipation up to 50W
Operates reliably in wide temperature range (-55°C to +150°C)
Provides high input capacitance and moderate gate charge for acceptable switching speeds
Application Environments
Switching power supplies (SMPS)
LED drivers
Motor controllers
Telecom power infrastructure
Solar inverters
Battery management systems
High-voltage DC-DC converters
Uninterruptible power supplies (UPS)
Selection Guidelines
Choose this model when high voltage (up to 650V) and medium-high current (up to 18A) are needed
Prefer for designs needing isolated package for easier heatsinking (TO-220F)
Check if your design requires low Rdson for optimal conduction efficiency
Ensure gate drive circuit can supply at least 10V
Match power and thermal requirements within 50W dissipation limit
Consider input capacitance and gate charge based on system’s switching speed requirements
Usage Considerations
Avoid voltage or current exceeding absolute maximum ratings to prevent device failure
Ensure proper heat sinking for high-power or continuous high current operation
Observe ESD precautions when handling
Allow for gate drive margin; do not exceed ±30V on gate-source voltage
Mount correctly in through-hole PCB or chassis for mechanical and electrical stability
Verify reliability in application’s operating temperature range (-55°C to 150°C)
Follow MSL 1 storage/handling, though device is not moisture sensitive
Potential Equivalent/Replacement Models
Several alternative or similar MOSFETs are available:
STF13N65M2
TK10A60W,S4VX
STF12N65M5
PJMF380N65E1_T0_00001
STF16N65M2
If none of these alternatives fully meet your technical requirements or for more specific recommendations, please contact our Ariat-Tech sales team for further assistance and up-to-date information.
Email us: Info@Ariat-Tech.com or RFQ AOTF18N65 Online.
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| AOTF18N65 Datasheet | Download AOTF18N65 Datasheet | Manufacturer Alpha and Omega Semiconductor, Inc. |
