IDT71V016SA12PH
Part Number IDT71V016SA12PH
Manufacturer Renesas Electronics America Inc
Description IC SRAM 1MBIT PARALLEL 44TSOP II
Quantity Available 3769 pcs new original in stock.
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Technical Information of IDT71V016SA12PH
Manufacturer Part Number IDT71V016SA12PH Category Integrated Circuits (ICs)
Manufacturer Renesas Electronics Corporation Description IC SRAM 1MBIT PARALLEL 44TSOP II
Package / Case 44-TSOP II Quantity Available 3769 pcs
Write Cycle Time - Word, Page 12ns Voltage - Supply 3V ~ 3.6V
Technology SRAM - Asynchronous Supplier Device Package 44-TSOP II
Series - Package / Case 44-TSOP (0.400", 10.16mm Width)
Package Tube Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount Memory Type Volatile
Memory Size 1Mbit Memory Organization 64K x 16
Memory Interface Parallel Memory Format SRAM
Base Product Number IDT71V016 Access Time 12 ns
DownloadIDT71V016SA12PH PDF - DE.pdfIDT71V016SA12PH PDF - FR.pdfIDT71V016SA12PH PDF - ES.pdfIDT71V016SA12PH PDF - IT.pdfIDT71V016SA12PH PDF - KR.pdf

Manufacturer Part Number

IDT71V016SA12PH

Description

1 Megabit asynchronous SRAM memory IC. Offers a parallel interface. Comes in a surface-mount 44-pin TSOP II package. Designed for fast data access with 12 ns access time. Used for fast temporary data storage in digital systems.

Specifications

Memory type: SRAM, volatile

Memory size: 1 Megabit (1Mb)

Organization: 64K x 16 bits

Technology: Asynchronous

Interface: Parallel

Access time: 12 ns

Write cycle time: 12 ns

Supply voltage: 3V to 3.6V

Operating temperature: 0°C to 70°C (commercial grade)

Mounting type: Surface mount

Package/case: 44-TSOP II (0.400", 10.16mm width)

Moisture Sensitivity Level (MSL): 3 (168 hours)

RoHS status: Not RoHS compliant

REACH status: Unaffected

Product status: Obsolete

Programmable: Not verified

ECCN: 3A991B2B

HTSUS: 8542.32.0041

Device Structure

Single-chip SRAM in a compact surface-mount 44-pin TSOP II form factor

Organized as 64K words by 16 bits per word

Volatile storage, loses data when power is removed

Only operates with parallel input/output bus

No error correction circuitry integrated

Performance Characteristics

12 nanosecond address access time for both reading and writing

Fast write cycle (12 ns per operation)

Operates at low voltage (3V to 3.6V), suitable for battery-powered or low-power designs

Stable operation in the recommended temperature range (0°C to 70°C)

Does not offer ECC or other advanced reliability features

High read/write speed for typical volatile SRAM

Application Environments

Used in digital systems needing rapid, temporary storage of data

Commonly used in cache memory, buffers, lookup tables, and high-speed data processing applications

Suitable for commercial environments (not harsh or industrial)

Integrated into embedded systems, telecommunications, networking equipment, and instrumentation

Selection Guidelines

Choose this model if you need fast, parallel-access, temporary storage for 1 Megabit of data

Suitable for designs running at 3V to 3.6V

Ensure that 44-TSOP II surface mount packaging fits your assembly process

Check for RoHS non-compliance if your end-product requires environmental certifications

Product is obsolete, consider using only for repair or legacy system needs

Operating temperature supports only standard commercial environments

Usage Considerations

Store and handle under moisture-controlled conditions due to MSL 3 rating

Observe ESD precautions to avoid damage

Use only in systems that can support 3V to 3.6V supply

Be aware the device is no longer in production, so future availability is not guaranteed

Consider lead-free and RoHS status if your design has environmental requirements

Potential Equivalent/Replacement Models

There are direct alternatives and compatible replacement models available, including:

IS64WV6416DBLL-10CTLA3

IS61WV6416BLL-12TLI-TR

IS61LV6416-10TL

IS64WV6416DBLL-10CTLA3-TR

IS64C6416AL-15TLA3-TR

If you need further model recommendations or require assistance identifying an exact equivalent, please contact the Ariat-Tech sales team for more information.

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