IRS2104STRPBF
Part Number IRS2104STRPBF
Manufacturer Infineon Technologies
Description IC GATE DRVR HALF-BRIDGE 8SOIC
Quantity Available 25300 pcs new original in stock.
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Technical Information of IRS2104STRPBF
Manufacturer Part Number IRS2104STRPBF Category Integrated Circuits (ICs)
Manufacturer Cypress Semiconductor (Infineon Technologies) Description IC GATE DRVR HALF-BRIDGE 8SOIC
Package / Case 8-SOIC Quantity Available 25300 pcs
Voltage - Supply 10V ~ 20V Supplier Device Package 8-SOIC
Series - Rise / Fall Time (Typ) 70ns, 35ns
Product Status Active Package / Case 8-SOIC (0.154', 3.90mm Width)
Package Tape & Reel (TR) Operating Temperature -40°C ~ 150°C (TJ)
Number of Drivers 2 Mounting Type Surface Mount
Logic Voltage - VIL, VIH 0.8V, 2.5V Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 600 V Gate Type IGBT, N-Channel MOSFET
Driven Configuration Half-Bridge Current - Peak Output (Source, Sink) 290mA, 600mA
Channel Type Synchronous Base Product Number IRS2104
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Manufacturer Part Number

IRS2104STRPBF

Description

Half-bridge gate driver IC for controlling IGBT and N-channel MOSFET switches. Packaged in 8-SOIC for surface mount. Designed for high-speed switching and robust operation in power management systems. RoHS3 compliant and suitable for industrial applications.

Specifications

Supply Voltage: 10V to 20V

Input Logic Voltage: Low 0.8V max, High 2.5V min

Peak Output Current: Source 290mA, Sink 600mA

High Side Max Voltage (Bootstrap): 600V

Rise Time: 70ns (typ)

Fall Time: 35ns (typ)

Operating Temp: -40°C to 150°C (Tj)

Package: 8-SOIC (3.90mm width)

Mounting Type: Surface mount

RoHS3 Status: Compliant

Moisture Sensitivity (MSL): 2 (1 year floor life)

Channels: 2, Synchronous, Non-Inverting

Channel Configuration: Half-Bridge

ECCN: EAR99

HTSUS: 8542.39.0001

Device Structure

Consists of two synchronous, non-inverting gate drivers for a half-bridge structure. Built in 8-pin SOIC package for compact surface mount use. Utilizes a bootstrap circuit for high side driving. Supports both IGBTs and N-channel MOSFETs.

Performance Characteristics

Fast rise and fall time for quick switching (70ns rise, 35ns fall). Can drive high-side at up to 600V, enabling use in high-voltage applications. Strong sink current for robust switch turn-off. Operates at extreme temperatures from -40°C to 150°C.

Application Environments

Widely used in motor drive circuits, switch-mode power supplies, DC-DC converters, solar inverters, and uninterruptible power supplies. Suitable for industrial, consumer, and automotive power management. Ideal for high-efficiency and high-voltage switching applications.

Selection Guidelines

Choose this IC for driving half-bridge IGBT or N-channel MOSFETs in circuits up to 600V. Match the supply voltage range (10–20V) with your system. Select when you need robust operation, fast switching, and RoHS3 compliance. Verify that the mounting type (8-SOIC surface mount) fits your PCB design.

Usage Considerations

Ensure bootstrap capacitor sizing and voltage levels are correct for your load and switching frequency. Pay attention to PCB layout for high voltage isolation and minimizing noise. Confirm that the peak output current meets the requirements of your power switches. Watch MSL handling for moisture sensitivity, especially before soldering.

Potential Equivalent/Replacement Models

There are alternative and similar half-bridge gate driver ICs available. Possible equivalents include:

Infineon IRS2104PBF (DIP package version)

Infineon IRS2108STRPBF: Similar function, different characteristics

International Rectifier IR2104STRPBF: Functionally similar, review datasheets for full compatibility

ON Semiconductor NCP5181

Texas Instruments UCC27201

STMicroelectronics L6385E

Always check the datasheet for pin compatibility, voltage, current ratings, and package when considering substitutes. If no direct match is found or you need advice for a special application, contact our Ariat-Tech sales team for detailed technical support and further alternatives.

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