| IRLML6402TRPBF | |
|---|---|
| Part Number | IRLML6402TRPBF |
| Manufacturer | Infineon Technologies |
| Description | MOSFET P-CH 20V 3.7A SOT23 |
| Quantity Available | 65300 pcs new original in stock. Request Stock & Quotation |
| Datasheets | 1.IRLML6402TRPBF.pdf2.IRLML6402TRPBF.pdf3.IRLML6402TRPBF.pdf4.IRLML6402TRPBF.pdf5.IRLML6402TRPBF.pdf6.IRLML6402TRPBF.pdf |
| Download | IRLML6402TRPBF Details PDF |
| IRLML6402TRPBF Price |
Request Price & Lead Time Online or Email us: Info@ariat-tech.com |
| Technical Information of IRLML6402TRPBF | |||
|---|---|---|---|
| Manufacturer Part Number | IRLML6402TRPBF | Category | Discrete Semiconductor |
| Manufacturer | Cypress Semiconductor (Infineon Technologies) | Description | MOSFET P-CH 20V 3.7A SOT23 |
| Package / Case | Micro3™/SOT-23 | Quantity Available | 65300 pcs |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA | Vgs (Max) | ±12V |
| Technology | MOSFET (Metal Oxide) | Supplier Device Package | Micro3™/SOT-23 |
| Series | HEXFET® | Rds On (Max) @ Id, Vgs | 65mOhm @ 3.7A, 4.5V |
| Product Status | Active | Power Dissipation (Max) | 1.3W (Ta) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | Package | Tape & Reel (TR) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 633 pF @ 10 V | Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| FET Type | P-Channel | FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) | Base Product Number | IRLML6402 |
| Download | IRLML6402TRPBF PDF - DE.pdfIRLML6402TRPBF PDF - FR.pdfIRLML6402TRPBF PDF - ES.pdfIRLML6402TRPBF PDF - IT.pdfIRLML6402TRPBF PDF - KR.pdf | ||
Product Model
IRLML6402TRPBF
Introduction
P-Channel HEXFET Power MOSFET
Brand and Manufacturer
International Rectifier (Infineon Technologies)
Features
High density cell design for low Rds(On)
Voltage controlled small signal switch
Rugged and reliable
Product Performance
High efficiency due to low power loss
Fast switching speed
Technical Specifications
MOSFET (Metal Oxide) technology
P-Channel, 20V Drain to Source Voltage (Vdss)
65 mOhm Rds On at 3.7A, 4.5V
1.2V Gate Threshold Voltage (Vgs(th)) at 250µA
12nC Gate Charge (Qg) at 5V
633pF Input Capacitance (Ciss) at 10V
2.5V - 4.5V Drive Voltage
1.3W Max Power Dissipation
Dimensions, Shape, and Packaging
TO-236-3, SC-59, SOT-23-3 package
Surface Mount
Tape & Reel (TR) packaging
Quality and Reliability
Designed for long-term reliability
Meets stringent quality standards
Product Advantages
Low on-resistance
High thermal efficiency
Suitable for low voltage applications
Product Competitiveness
Competitive in power management applications
Offers a balanced performance for efficiency and power
Compatibility
Compatible with a wide range of high-speed circuits and power management applications
Standard Certification and Compliance
Meets international standards for electronic components
Lifespan and Sustainability
Designed for durability and long operational life
Eco-friendly options available in manufacturing and materials
Actual Application Fields
Power supply switches
Load/Power management in portable devices
DC/DC converters
Email us: Info@Ariat-Tech.com or RFQ IRLML6402TRPBF Online.
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| IRLML6402TRPBF Image | IRLML6402TRPBF Picture | IRLML6402TRPBF PDF | |||
| IRLML6402TRPBF Datasheet | Download IRLML6402TRPBF Datasheet | Manufacturer Cypress Semiconductor (Infineon Technologies) | |||
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