| IRFB4710PBF | |
|---|---|
| Part Number | IRFB4710PBF |
| Manufacturer | Infineon Technologies |
| Description | MOSFET N-CH 100V 75A TO220AB |
| Quantity Available | 15895 pcs new original in stock. Request Stock & Quotation |
| Datasheets | 1.IRFB4710PBF.pdf2.IRFB4710PBF.pdf3.IRFB4710PBF.pdf4.IRFB4710PBF.pdf5.IRFB4710PBF.pdf6.IRFB4710PBF.pdf7.IRFB4710PBF.pdf |
| Download | IRFB4710PBF Details PDF |
| IRFB4710PBF Price |
Request Price & Lead Time Online or Email us: Info@ariat-tech.com |
| Technical Information of IRFB4710PBF | |||
|---|---|---|---|
| Manufacturer Part Number | IRFB4710PBF | Category | Discrete Semiconductor |
| Manufacturer | Cypress Semiconductor (Infineon Technologies) | Description | MOSFET N-CH 100V 75A TO220AB |
| Package / Case | TO-220AB | Quantity Available | 15895 pcs |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA | Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) | Supplier Device Package | TO-220AB |
| Series | HEXFET® | Rds On (Max) @ Id, Vgs | 14mOhm @ 45A, 10V |
| Product Status | Last Time Buy | Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Package / Case | TO-220-3 | Package | Tube |
| Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 6160 pF @ 25 V | Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| FET Type | N-Channel | FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) | Base Product Number | IRFB4710 |
| Download | IRFB4710PBF PDF - DE.pdfIRFB4710PBF PDF - FR.pdfIRFB4710PBF PDF - IT.pdfIRFB4710PBF PDF - KR.pdfIRFB4710PBF PDF - ES.pdf | ||
Product Model
IRFB4710PBF
Introduction
The IRFB4710PBF is a high-performance N-Channel MOSFET designed for efficient power management and conversion.
Brand and Manufacturer
International Rectifier, now part of Infineon Technologies
Features
N-Channel HEXFET Power MOSFET technology
Lead-free and RoHS Compliant for environmental safety
Through-hole mounting for easy integration
High power dissipation capability
Low on-resistance
High drain to source voltage
Product Performance
Power Dissipation (Max): 3.8W at ambient temperature, 200W with case temperature
Continuous Drain Current (Id) at 25°C: 75A
Low Rds On (Max) at 45A, 10V: 14 mOhm
Gate Charge (Qg) (Max) at 10V: 170nC
Input Capacitance (Ciss) (Max) at 25V: 6160pF
Technical Specifications
Technology: MOSFET (Metal Oxide)
Operating Temperature Range: -55°C to 175°C
Package/Case: TO-220-3
Drain to Source Voltage (Vdss): 100V
Gate Source Voltage (Vgs Max): ±20V
Supplier Device Package: TO-220AB
Dimensions, Shape, and Packaging
Manufacturer's packaging: TO-220AB, shipped in tubes
Mounting Type: Through Hole
Quality and Reliability
Robust construction and reliable performance in demanding applications.
Product Advantages
High efficiency and thermal performance for power applications
Versatile through-hole design for various circuit implementations
Product Competitiveness
Competitively positioned in power management applications with high-performance specifications and reliability.
Compatibility
Compatible with a wide range of driving circuits and applications due to its standard gate drive requirements.
Standard Certification and Compliance
Lead-free and RoHS compliant, ensuring environmental conformity and safety.
Lifespan and Sustainability
Designed for longevity and reliability in a wide range of environmental conditions.
Actual Application Fields
Power supplies
Motor drives
Power conversion systems
Automotive applications
Renewable energy systems
Email us: Info@Ariat-Tech.com or RFQ IRFB4710PBF Online.
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| IRFB4710PBF Image | IRFB4710PBF Picture | IRFB4710PBF PDF | |||
| IRFB4710PBF Datasheet | Download IRFB4710PBF Datasheet | Manufacturer Cypress Semiconductor (Infineon Technologies) | |||
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