Manufacturer Part Number

DMN3016LFDE-7

Description

N-channel MOSFET with 30V drain-to-source voltage, 10A continuous drain current, 12mOhm maximum Rds(on) at 10V, and low gate charge. Comes in a U-DFN2020-6 (Type E) surface-mount package. Designed for medium voltage load switching, DC-DC converters, and general power management in compact designs.

Specifications

FET Type: N-Channel

Drain to Source Voltage (Vdss): 30V

Continuous Drain Current (Id, 25°C): 10A

Maximum Gate-Source Voltage (Vgs): ±20V

Maximum Rds(on) @ 10V, 11A: 12mOhm

Gate Threshold Voltage (Vgs(th)): Max 2V @ 250µA

Maximum Gate Charge (Qg): 25.1nC @ 10V

Input Capacitance (Ciss): 1415pF @ 15V

Maximum Power Dissipation: 730mW

Operating Temperature Range: -55°C to 150°C

Package: U-DFN2020-6 (Type E), 6-pin PowerUDFN

RoHS Status: ROHS3 Compliant

Moisture Sensitivity Level: 1 (Unlimited)

ECCN: EAR99

REACH Status: Unaffected

Device Structure

Single N-channel MOSFET in a compact ultra-thin dual flat no-lead (UDFN) package with six connections. The MOSFET die is mounted to maximize thermal efficiency and minimize electrical resistance, ideal for surface-mount assembly.

Performance Characteristics

Handles up to 10A of current continuously, with low on-resistance (12mOhm) for reduced power loss and heat generation even at higher currents. Requires just 4.5V for full enhancement, allowing for compatibility with standard logic levels. Low gate charge (25.1nC) supports efficient fast switching, lowering gate drive power requirements. Good thermal performance with a maximum dissipation of 730mW.

Application Environments

Ideal for power management circuits in compact and portable devices, including DC-DC converters, load switches, battery-powered equipment, notebook PCs, mobile phones, consumer electronics, and similar environments that need low power loss and efficient switching in confined spaces.

Selection Guidelines

Choose this MOSFET if you need reliable medium-voltage switching under 30V, with high current up to 10A, low Rds(on) to minimize heat and power loss, and logic-level drive compatibility. Its compact package is suitable for tightly packed PCB layouts. Verify temperature, voltage, and current meet system needs.

Usage Considerations

Ensure proper PCB heat dissipation as high currents can create significant thermal load; follow recommended pad layouts for thermal management. Do not exceed maximum ratings for voltage, current, and temperature to avoid device degradation or failure. Use a gate drive voltage of at least 4.5V for optimal performance. Protect against electrostatic discharge during handling and assembly.

Potential Equivalent/Replacement Models

There are several alternative or similar MOSFETs in the market based on voltage, current, and package. Common equivalents include:

IRLML6344 (Infineon/International Rectifier, 30V, 10A, low Rds(on), similar package)

BSC026N08NS5 (Infineon, 30V-class, low Rds(on), suitable for high-current switching)

FDMS3602 (ON Semiconductor, 30V, similar specs but check exact Rds(on) and package)

Si3460DV (Vishay, 30V, low Rds(on))

AO3400A (Alpha & Omega, 30V/5.8A, slightly lower current)

Note: For exact pin compatibility, qualification, or finding direct drop-in replacements, please contact our Ariat-Tech sales team for the most accurate advice and support regarding equivalent models.

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