| AOTF10N50FD | |
|---|---|
| Part Number | AOTF10N50FD |
| Manufacturer | Alpha & Omega Semiconductor Inc. |
| Description | MOSFET N-CH 500V 10A TO220-3F |
| Quantity Available | 38300 pcs new original in stock. Request Stock & Quotation |
| Datasheets | 1.AOTF10N50FD.pdf2.AOTF10N50FD.pdf3.AOTF10N50FD.pdf4.AOTF10N50FD.pdf5.AOTF10N50FD.pdf |
| Download | AOTF10N50FD Details PDF |
| AOTF10N50FD Price |
Request Price & Lead Time Online or Email us: Info@ariat-tech.com |
| Technical Information of AOTF10N50FD | |||
|---|---|---|---|
| Manufacturer Part Number | AOTF10N50FD | Category | Discrete Semiconductor |
| Manufacturer | Alpha and Omega Semiconductor, Inc. | Description | MOSFET N-CH 500V 10A TO220-3F |
| Package / Case | TO-220F | Quantity Available | 38300 pcs |
| Vgs(th) (Max) @ Id | 4.2V @ 250µA | Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) | Supplier Device Package | TO-220F |
| Series | - | Rds On (Max) @ Id, Vgs | 750mOhm @ 5A, 10V |
| Power Dissipation (Max) | 50W (Tc) | Package / Case | TO-220-3 Full Pack |
| Package | Tube | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Input Capacitance (Ciss) (Max) @ Vds | 1240 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | FET Type | N-Channel |
| FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 500 V | Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Base Product Number | AOTF10 | ||
| Download | AOTF10N50FD PDF - DE.pdfAOTF10N50FD PDF - FR.pdfAOTF10N50FD PDF - ES.pdfAOTF10N50FD PDF - IT.pdfAOTF10N50FD PDF - KR.pdf | ||
AOTF10N50FD
This part is an N-channel MOSFET made by Alpha & Omega Semiconductor Inc. It supports a drain-to-source voltage of 500V and a continuous drain current of 10A. Power dissipation can reach up to 50W. The device is provided in a TO-220F package for through-hole mounting. The MOSFET is now obsolete, but new original stock is still available. RoHS3 compliant and REACH unaffected, suitable for applications needing moderate to high voltage and current switching.
N-channel MOSFET
Vdss: 500V
Id (continuous): 10A at 25°C (Tc)
Rds(on): 750mΩ max at 5A, 10V
Vgs(th): 4.2V max at 250µA
Vgs(max): ±30V
Qg: 35 nC max at Vgs = 10V
Ciss: 1240pF max at Vds = 25V
Power dissipation: 50W (Tc)
Package: TO-220F (Full Pack), through-hole
Operating temperature: -55°C to 150°C (TJ)
Moisture Sensitivity Level: 1 (unlimited)
RoHS3 compliant, REACH unaffected
The chip structure uses a metal oxide semiconductor field-effect transistor (MOSFET) process. N-channel type with a single transistor in a TO-220F package. It has three leads: gate, drain, and source. The full pack (TO-220F) includes an insulated tab for improved heat dissipation and electrical isolation. The structure favors high voltage blocking and moderate current handling.
Withstands up to 500V across drain-source
Handles continuous current up to 10A at case temperature
Low on-resistance (750mΩ), enables reduced conduction losses
Fast switching with moderate gate charge (35 nC)
Suitable for hard-switching applications
Insulated package helps reduce risk of shorts to heatsink
Wide temperature range suitable for industrial environments
Power supply circuits (switching, rectifier, inverter)
LED drivers
Motor drivers and relay replacements
High voltage DC/DC converters
Uninterruptible power supplies (UPS)
Industrial and consumer-grade electronic equipment
Not suited for logic-level drive, needs higher gate voltage (10V)
Check required drain-to-source voltage (500V max, must not be exceeded). Verify continuous drain current needs (must be ≤10A at cooling conditions). Ensure drive voltage available at gate is at least 10V for minimum on-resistance. Rds(on) of 750mΩ can be considered moderate; compare to application requirements for efficiency. Assess thermal management: TO-220F package helps, but additional heatsinking may be needed. If higher efficiency or lower Rds(on) is required, consider newer alternatives.
Obsolete part; ensure inventory availability before design-in. Require 10V gate drive for lowest Rds(on); not suitable for low-voltage direct logic drive. Provide adequate heatsinking for 50W dissipation. Observe ESD protection practices. Respect ±30V max Vgs rating to prevent gate damage. Use in through-hole PCBs with matching footprint.
There are alternative and equivalent models available, including:
ZDX080N50
R5009ANX
STP9NK50ZFP
TK11A55D (STA4,Q,M)
TK8A50D (STA4,Q,M)
For more replacements or detailed cross-reference help, contact the Ariat-Tech sales team for tailored advice.
| AOTF10N50FD Stock | AOTF10N50FD Price | AOTF10N50FD Electronics | |||
| AOTF10N50FD Components | AOTF10N50FD Inventory | AOTF10N50FD Digikey | |||
| Supplier AOTF10N50FD | Order AOTF10N50FD Online | Inquiry AOTF10N50FD | |||
| AOTF10N50FD Image | AOTF10N50FD Picture | AOTF10N50FD PDF | |||
| AOTF10N50FD Datasheet | Download AOTF10N50FD Datasheet | Manufacturer Alpha and Omega Semiconductor, Inc. | |||
| Related parts for AOTF10N50FD | |||||
|---|---|---|---|---|---|
| Image | Part Number | Description | Manufacturer | Get a Quote | |
| AOTF10N50FD_001 | MOSFET N-CH 500V 10A TO220-3F | Alpha & Omega Semiconductor Inc. | |||
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| AOTF10N60CL | N | Alpha & Omega Semiconductor Inc. | |||
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| AOTF10N50 | AOS TO-220F-3 | AOS | |||
| AOTF10N60FD | AOTF10N60FD AOS | AOS | |||
| AOTF10B65LN2 | AOS TO-220F | AOS | |||
| AOTF10B65LN1 | AOS TO-220F | AOS | |||
| AOTF10B65MQ2 | IGBT 10A | Alpha & Omega Semiconductor Inc. | |||
| AOTF10N60A | AOS TO-220F | AOS | |||
| AOTF10N60 IC | AOS TO-220F | AOS | |||
| AOTF10B60D TF10B60D | AOS | ||||
| AOTF10N60 | MOSFET N-CH 600V 10A TO220-3F | Alpha & Omega Semiconductor Inc. | |||
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AOTF10B60D2 AOTF10B60D | AOTF10B60D2 AOTF10B60D AO/ | AO/ | ||
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