Manufacturer Part Number

STD5NM60-1

Description

N-channel MOSFET, 600V, 5A output, housed in I-PAK (TO-251 short leads) for through-hole mounting. Durable, energy-efficient, suitable for high-voltage and medium-current switching applications. Part of the STMicroelectronics MDmesh™ power MOSFET family, offering fast switching and low loss performance.

Specifications

Drain to source voltage (Vdss): 600V

Continuous drain current (Id) at 25°C: 5A

Maximum Rds(on) at 2.5A, 10V Vgs: 1Ω

Gate threshold voltage (Vgs(th)): max 5V @ 250µA

Gate charge (Qg): max 18nC @ 10V

Input capacitance (Ciss): max 400pF @ 25V

Maximum Vgs (gate-source): ±30V

Power dissipation: max 96W (Tc)

Operating temperature range: -55°C to +150°C

Package: TO-251 (I-PAK), 3 Pin, short leads

Mounting type: Through hole

RoHS3 compliant, REACH unaffected

Moisture Sensitivity Level: 1 (unlimited shelf life)

Device Structure

Single N-channel MOSFET

MDmesh™ technology for improved efficiency

Metal oxide semiconductor field effect transistor

Encapsulated in I-PAK (TO-251AA) package, 3 leads

Through-hole mechanical configuration for robust mounting

Performance Characteristics

High voltage withstand up to 600V

Low on-state resistance (1Ω), reduces conduction loss

Fast switching capability for efficient power conversion

Handles up to 5A continuous drain current

Gate charge and capacitance optimized for fast and low-loss switching

High-temperature operation up to 150°C for demanding environments

Power dissipation up to 96W, suitable for medium-high power applications

Application Environments

Power supplies (SMPS, adapters)

Industrial and consumer power conversion circuits

Lighting ballasts

High voltage DC-DC converters

Inductive load switching

Motor drive circuits

Compatible with environments requiring RoHS and REACH compliance

Selection Guidelines

Choose for applications needing up to 600V withstand and 5A continuous current

Match Rds(on), gate charge, and capacitance to the required switching speed and efficiency

Ensure power dissipation and package can handle the thermal requirements

Confirm voltage (Vdss), current (Id), and package type fit your design constraints

Check compliance requirements (RoHS, REACH)

Select I-PAK (TO-251) package for through-hole mounting preferences

Usage Considerations

Use appropriate gate drive voltage, typically 10V for full enhancement

Account for on-resistance and power loss in circuit thermal design

Maintain adequate heat sinking to avoid overheating above 150°C

Avoid exceeding drain-source and gate-source maximum voltages

Protect the gate with suitable resistors/circuits to avoid ESD damage

Limit operation within rated current and dissipation values

Store in standard dry conditions (MSL1), no extra moisture precautions required

Potential Equivalent/Replacement Models

No direct equivalents or alternates are specified in the provided data.

Recommended: If alternative models are needed for STD5NM60-1, please contact the Ariat-Tech sales team for the latest compatible or equivalent device options.

STD5NM60-1 are New and Original in Stock, Find STD5NM60-1 electronics components stock, Datasheet, Inventory and Price at Ariat-Tech.com Online, Order STD5NM60-1 STMicroelectronics with warrantied and confidence from Ariat Technology Limitd. Ship via DHL/FedEx/UPS. Payment with Wire Transfer or PayPal is OK.
Email us: Info@Ariat-Tech.com or RFQ STD5NM60-1 Online.