CSD87381PT
Part Number CSD87381PT
Manufacturer Texas Instruments
Description MOSFET 2N-CH 30V 15A 5PTAB
Quantity Available 53501 pcs new original in stock.
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Datasheets 1.CSD87381PT.pdf2.CSD87381PT.pdf
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Technical Information of CSD87381PT
Manufacturer Part Number CSD87381PT Category Discrete Semiconductor
Manufacturer Texas Instruments Description MOSFET 2N-CH 30V 15A 5PTAB
Package / Case 5-PTAB (3x2.5) Quantity Available 53501 pcs
Vgs(th) (Max) @ Id 1.9V @ 250µA Technology MOSFET (Metal Oxide)
Supplier Device Package 5-PTAB (3x2.5) Series NexFET™
Rds On (Max) @ Id, Vgs 16.3mOhm @ 8A, 8V Product Status Active
Power - Max 4W Package / Case 5-LGA
Package Tape & Reel (TR) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Input Capacitance (Ciss) (Max) @ Vds 564pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 5nC @ 4.5V FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 15A
Configuration 2 N-Channel (Half Bridge) Base Product Number CSD87381
DownloadCSD87381PT PDF - DE.pdf

Manufacturer Part Number

CSD87381PT

Description

Dual N-channel MOSFET array made by Texas Instruments. Supports 30V drain-to-source voltage and 15A continuous drain current. Logic level gate drive enables direct interfacing with low-voltage logic circuits. Half-bridge configuration with low Rds(on) ideal for efficient, high-speed switching. Package is 5-pin surface mount LGA (3x2.5 mm). RoHS3 and REACH compliant.

Specifications

Maximum Drain-to-Source Voltage (Vdss): 30V

Continuous Drain Current (Id @ 25°C): 15A

Maximum Rds(on): 16.3 mΩ @ 8A, 8V

Gate Threshold Voltage (Vgs(th)): up to 1.9V

Maximum Gate Charge (Qg): 5nC @ 4.5V

Maximum Input Capacitance (Ciss): 564pF @ 15V

Maximum Power Dissipation: 4W

Operating Junction Temperature: -55°C to 150°C

Packaging: 5-LGA, 5-PTAB (3x2.5mm)

Mounting Type: Surface Mount

Moisture Sensitivity Level: 1 (unlimited)

Environmental: RoHS3 compliant, REACH unaffected

Device Structure

Contains two N-channel MOSFETs in a half-bridge configuration. Integrated into a single compact chip using NexFET technology. Arranged for low-loss, high-efficiency switching.

Performance Characteristics

Very low Rds(on) and low gate charge for reduced conduction and switching losses. Supports logic level drive. High current capability in small footprint. Wide operating temperature range. Fast switching suitable for high-frequency applications.

Application Environments

Commonly used for DC/DC converters, synchronous buck regulators, point-of-load power supply modules, VRMs, server and computing power management, portable electronics, and high-efficiency power stages.

Selection Guidelines

Choose this device for compact half-bridge MOSFET solutions up to 15A and 30V. Suitable when logic-level gate drive and high efficiency are needed. Check power and current handling versus specific application load, and ensure compatibility with the package and footprint.

Usage Considerations

Observe safe handling for ESD-sensitive parts. Ensure good PCB heat dissipation for full 4W operation. Match gate drive voltage for optimum switching speed and efficiency. Verify layout for minimal parasitic inductance and resistance. Follow moisture and soldering guidelines since MSL is 1 (unlimited floor life).

Potential Equivalent/Replacement Models

Direct drop-in equivalents are rare due to the specific package and performance. For similar function, consider these Texas Instruments parts:

CSD87352Q5D

CSD87381Q3D

CSD87588N

Competitors with similar dual N-channel half-bridge MOSFETs exist, but package size, footprint, or performance may differ. If you need more alternatives or exact matches, please contact the Ariat-Tech sales team for the most up-to-date substitution options.

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