| MJD112-1G | |
|---|---|
| Part Number | MJD112-1G |
| Manufacturer | onsemi |
| Description | TRANS NPN DARL 100V 2A IPAK |
| Quantity Available | 89941 pcs new original in stock. Request Stock & Quotation |
| Datasheets | 1.MJD112-1G.pdf2.MJD112-1G.pdf3.MJD112-1G.pdf4.MJD112-1G.pdf |
| Download | MJD112-1G Details PDF |
| MJD112-1G Price |
Request Price & Lead Time Online or Email us: Info@ariat-tech.com |
| Technical Information of MJD112-1G | |||
|---|---|---|---|
| Manufacturer Part Number | MJD112-1G | Category | Discrete Semiconductor |
| Manufacturer | AMI Semiconductor/onsemi | Description | TRANS NPN DARL 100V 2A IPAK |
| Package / Case | I-PAK | Quantity Available | 89941 pcs |
| Voltage - Collector Emitter Breakdown (Max) | 100 V | Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
| Transistor Type | NPN - Darlington | Supplier Device Package | I-PAK |
| Series | - | Product Status | Active |
| Power - Max | 1.75 W | Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Package | Tube | Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Frequency - Transition | 25MHz |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V | Current - Collector Cutoff (Max) | 20µA |
| Current - Collector (Ic) (Max) | 2 A | Base Product Number | MJD112 |
| Download | MJD112-1G PDF - DE.pdfMJD112-1G PDF - ES.pdfMJD112-1G PDF - IT.pdfMJD112-1G PDF - KR.pdfMJD112-1G PDF - FR.pdf | ||
MJD112-1G
NPN Darlington Bipolar Junction Transistor
AMI Semiconductor / ON Semiconductor
High DC current gain (hFE) of 1000 at 2A and 3V
Darlington pair configuration for high input impedance and gain
Through-hole mounting for easy integration
Maximum collector current of 2A
Collector-emitter breakdown voltage of 100V
Vce saturation of 3V max at 40mA and 4A
Frequency transition of 25MHz
Power dissipation of 1.75W
NPN transistor type
Darlington configuration
100V collector-emitter breakdown voltage
20µA collector cutoff current
TO-251-3 Short Leads, IPak, TO-251AA package
Packaging in a tube
Lead free and RoHS compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Enhanced reliability due to compliance with RoHS
Competitive lead time of 9 weeks
Significant gain in a compact package
Compatible with through-hole mounting processes
RoHS compliant
Robust operating temperature range from -65°C to 150°C
Can be used in power regulation circuits, amplifiers, and switching applications
| MJD112-1G Stock | MJD112-1G Price | MJD112-1G Electronics | |||
| MJD112-1G Components | MJD112-1G Inventory | MJD112-1G Digikey | |||
| Supplier MJD112-1G | Order MJD112-1G Online | Inquiry MJD112-1G | |||
| MJD112-1G Image | MJD112-1G Picture | MJD112-1G PDF | |||
| MJD112-1G Datasheet | Download MJD112-1G Datasheet | Manufacturer AMI Semiconductor/onsemi | |||
| Related parts for MJD112-1G | |||||
|---|---|---|---|---|---|
| Image | Part Number | Description | Manufacturer | Get a Quote | |
| MJD112T4 | TRANS DARL NPN 2A 100V DPAK | onsemi | |||
| MJD112-1G/MJD117 | MJD112-1G/MJD117 ON | ON | |||
| MJD112-001G | MJD112-001G ON | ON | |||
| MJD112G | TRANS NPN DARL 100V 2A DPAK | onsemi | |||
![]() |
MJD-4144A | MOTOROLA New | MOTOROLA | ||
| MJD112T4 | TRANS NPN DARL 100V 2A DPAK | STMicroelectronics | |||
| MJD112T4G/J112G | ON 252-251-89 | ON | |||
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MJD112-RTF | KEC TO-252 | KEC | ||
| MJD112G MOS | ON TO-251 | ON | |||
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MJD112L-U/P | MJD112L-U/P KEC | KEC | ||
![]() |
MJD112-RTF/P | KEC TO-252 | KEC | ||
| MJD112RL | TRANS NPN DARL 100V 2A DPAK | onsemi | |||
| MJD112-1 | MJD112-1 MOTOLORA | ON | |||
![]() |
MJD112-TP | TRANS NPN 100V 2A DPAK | Micro Commercial Co | ||
| MJD112RLG | TRANS NPN DARL 100V 2A DPAK | onsemi | |||
| MJD112T4G/MJD117T4G | MJD112T4G/MJD117T4G ON | ON | |||
![]() |
MJD112 | MJD112 KEC | Cj | ||
| MJD112T4G | TRANS NPN DARL 100V 2A DPAK | onsemi | |||
| MJD112/117 | ON TO-252 | ON | |||
| MJD112-001 | TRANS NPN DARL 100V 2A IPAK | onsemi | |||
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