| FDMA1029PZ | |
|---|---|
| Part Number | FDMA1029PZ |
| Manufacturer | onsemi |
| Description | MOSFET 2P-CH 20V 3.1A MICROFET |
| Quantity Available | 95400 pcs new original in stock. Request Stock & Quotation |
| Datasheets | 1.FDMA1029PZ.pdf2.FDMA1029PZ.pdf3.FDMA1029PZ.pdf4.FDMA1029PZ.pdf5.FDMA1029PZ.pdf6.FDMA1029PZ.pdf |
| Download | FDMA1029PZ Details PDF |
| FDMA1029PZ Price |
Request Price & Lead Time Online or Email us: Info@ariat-tech.com |
| Technical Information of FDMA1029PZ | |||
|---|---|---|---|
| Manufacturer Part Number | FDMA1029PZ | Category | Discrete Semiconductor |
| Manufacturer | AMI Semiconductor/onsemi | Description | MOSFET 2P-CH 20V 3.1A MICROFET |
| Package / Case | 6-WDFN (2x2) | Quantity Available | 95400 pcs |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 6-WDFN (2x2) | Series | PowerTrench® |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 3.1A, 4.5V | Product Status | Active |
| Power - Max | 700mW | Package / Case | 6-WDFN Exposed Pad |
| Package | Tape & Reel (TR) | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V | FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V | Current - Continuous Drain (Id) @ 25°C | 3.1A |
| Configuration | 2 P-Channel (Dual) | Base Product Number | FDMA1029 |
| Download | FDMA1029PZ PDF - DE.pdfFDMA1029PZ PDF - FR.pdfFDMA1029PZ PDF - ES.pdfFDMA1029PZ PDF - IT.pdfFDMA1029PZ PDF - KR.pdf | ||
FDMA1029PZ
Dual P-Channel MOSFET array in a compact 6-lead WDFN (2x2 mm) surface-mount package. Rated for 20V drain-to-source voltage, continuous drain current of 3.1A per MOSFET, and up to 700mW power dissipation. Designed with PowerTrench® technology for low resistance and efficient switching. Features logic-level gate drive compatible with 4.5V gate voltage. Suitable for space-saving, high-performance switching applications.
MOSFET Type: 2 P-Channel (Dual)
Drain-Source Voltage (Vdss): 20V
Continuous Drain Current (Id) @ 25°C: 3.1A
Max On-Resistance (Rds(on)) @ 3.1A, Vgs=4.5V: 95 mΩ
Gate Threshold Voltage (Vgs(th)) Max: 1.5V @ 250 µA
Gate Charge (Qg) Max: 10 nC @ 4.5V
Input Capacitance (Ciss) Max: 540 pF @ 10V
Maximum Power Dissipation: 700 mW
Operating Junction Temperature: -55°C to 150°C
Package Size: 6-WDFN (2x2 mm) with exposed pad
RoHS Compliant (RoHS3), Moisture Sensitivity Level 1 (unlimited)
Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
Dual P-Channel configuration integrated in one package
PowerTrench® planar process technology providing low on-resistance and improved switching efficiency
Designed in a small, low-profile WDFN surface-mount package with an exposed thermal pad for efficient heat dissipation
Low Rds(on) at logic-level gate voltages ensures lower power loss and better efficiency in switching circuits
Fast switching enabled by low gate charge (10 nC max) reduces switching power dissipation
Stable gate threshold voltage suitable for low voltage control circuitry
Wide operating temperature range (-55°C to 150°C) making it reliable in various thermal environments
Compact footprint and low profile ideal for dense PCB layouts and portable devices
Power management circuits in portable and battery-operated devices
DC-DC converters, load switching, and power rail control
High-efficiency power switching in communication equipment
Low voltage motor driver circuits
Battery protection and power distribution in consumer electronics
Automotive electronics where compact size and temperature tolerance are required
Choose FDMA1029PZ when low voltage (20V max) P-channel MOSFETs with moderate continuous current (up to 3.1A) are needed
Suitable for applications requiring dual MOSFETs combined in a compact package to save board space
Evaluate Rds(on) and gate charge values for efficiency targets in switching applications
Confirm package type (6-WDFN 2x2 mm) fits mechanical and thermal requirements for the design
Verify maximum power dissipation and operating temperature range support environmental demands
Ensure gate drive voltage is sufficient to fully turn on the device (logic level gate suitable for ~4.5V)
Use proper PCB layout with thermal pad soldered to a thermal plane to maximize heat dissipation
Protect from ESD and handle moisture sensitivity level 1 devices per standard procedures
Avoid voltage or current exceeding the absolute maximum ratings to prevent device damage
Consider thermal derating at elevated temperatures to maintain reliability
Similar dual P-Channel MOSFET arrays from onsemi include FDMA1028, FDMA1030 series, check datasheets for exact parameters
Alternative replacements may include discrete P-Channel MOSFETs with similar voltage/current ratings but may require multiple components and larger board space
If no exact equivalent model is found or for custom replacement advice, customers should contact Ariat-Tech sales team via the official website for guidance and availability of alternatives or new products
| FDMA1029PZ Stock | FDMA1029PZ Price | FDMA1029PZ Electronics | |||
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| Supplier FDMA1029PZ | Order FDMA1029PZ Online | Inquiry FDMA1029PZ | |||
| FDMA1029PZ Image | FDMA1029PZ Picture | FDMA1029PZ PDF | |||
| FDMA1029PZ Datasheet | Download FDMA1029PZ Datasheet | Manufacturer AMI Semiconductor/onsemi | |||
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