FDMA1029PZ
Part Number FDMA1029PZ
Manufacturer onsemi
Description MOSFET 2P-CH 20V 3.1A MICROFET
Quantity Available 95400 pcs new original in stock.
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Datasheets 1.FDMA1029PZ.pdf2.FDMA1029PZ.pdf3.FDMA1029PZ.pdf4.FDMA1029PZ.pdf5.FDMA1029PZ.pdf6.FDMA1029PZ.pdf
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Technical Information of FDMA1029PZ
Manufacturer Part Number FDMA1029PZ Category Discrete Semiconductor
Manufacturer AMI Semiconductor/onsemi Description MOSFET 2P-CH 20V 3.1A MICROFET
Package / Case 6-WDFN (2x2) Quantity Available 95400 pcs
Vgs(th) (Max) @ Id 1.5V @ 250µA Technology MOSFET (Metal Oxide)
Supplier Device Package 6-WDFN (2x2) Series PowerTrench®
Rds On (Max) @ Id, Vgs 95mOhm @ 3.1A, 4.5V Product Status Active
Power - Max 700mW Package / Case 6-WDFN Exposed Pad
Package Tape & Reel (TR) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Input Capacitance (Ciss) (Max) @ Vds 540pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.1A
Configuration 2 P-Channel (Dual) Base Product Number FDMA1029
DownloadFDMA1029PZ PDF - DE.pdfFDMA1029PZ PDF - FR.pdfFDMA1029PZ PDF - ES.pdfFDMA1029PZ PDF - IT.pdfFDMA1029PZ PDF - KR.pdf

Manufacturer Part Number

FDMA1029PZ

Description

Dual P-Channel MOSFET array in a compact 6-lead WDFN (2x2 mm) surface-mount package. Rated for 20V drain-to-source voltage, continuous drain current of 3.1A per MOSFET, and up to 700mW power dissipation. Designed with PowerTrench® technology for low resistance and efficient switching. Features logic-level gate drive compatible with 4.5V gate voltage. Suitable for space-saving, high-performance switching applications.

Specifications

MOSFET Type: 2 P-Channel (Dual)

Drain-Source Voltage (Vdss): 20V

Continuous Drain Current (Id) @ 25°C: 3.1A

Max On-Resistance (Rds(on)) @ 3.1A, Vgs=4.5V: 95 mΩ

Gate Threshold Voltage (Vgs(th)) Max: 1.5V @ 250 µA

Gate Charge (Qg) Max: 10 nC @ 4.5V

Input Capacitance (Ciss) Max: 540 pF @ 10V

Maximum Power Dissipation: 700 mW

Operating Junction Temperature: -55°C to 150°C

Package Size: 6-WDFN (2x2 mm) with exposed pad

RoHS Compliant (RoHS3), Moisture Sensitivity Level 1 (unlimited)

Device Structure

Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

Dual P-Channel configuration integrated in one package

PowerTrench® planar process technology providing low on-resistance and improved switching efficiency

Designed in a small, low-profile WDFN surface-mount package with an exposed thermal pad for efficient heat dissipation

Performance Characteristics

Low Rds(on) at logic-level gate voltages ensures lower power loss and better efficiency in switching circuits

Fast switching enabled by low gate charge (10 nC max) reduces switching power dissipation

Stable gate threshold voltage suitable for low voltage control circuitry

Wide operating temperature range (-55°C to 150°C) making it reliable in various thermal environments

Compact footprint and low profile ideal for dense PCB layouts and portable devices

Application Environments

Power management circuits in portable and battery-operated devices

DC-DC converters, load switching, and power rail control

High-efficiency power switching in communication equipment

Low voltage motor driver circuits

Battery protection and power distribution in consumer electronics

Automotive electronics where compact size and temperature tolerance are required

Selection Guidelines

Choose FDMA1029PZ when low voltage (20V max) P-channel MOSFETs with moderate continuous current (up to 3.1A) are needed

Suitable for applications requiring dual MOSFETs combined in a compact package to save board space

Evaluate Rds(on) and gate charge values for efficiency targets in switching applications

Confirm package type (6-WDFN 2x2 mm) fits mechanical and thermal requirements for the design

Verify maximum power dissipation and operating temperature range support environmental demands

Usage Considerations

Ensure gate drive voltage is sufficient to fully turn on the device (logic level gate suitable for ~4.5V)

Use proper PCB layout with thermal pad soldered to a thermal plane to maximize heat dissipation

Protect from ESD and handle moisture sensitivity level 1 devices per standard procedures

Avoid voltage or current exceeding the absolute maximum ratings to prevent device damage

Consider thermal derating at elevated temperatures to maintain reliability

Potential Equivalent/Replacement Models

Similar dual P-Channel MOSFET arrays from onsemi include FDMA1028, FDMA1030 series, check datasheets for exact parameters

Alternative replacements may include discrete P-Channel MOSFETs with similar voltage/current ratings but may require multiple components and larger board space

If no exact equivalent model is found or for custom replacement advice, customers should contact Ariat-Tech sales team via the official website for guidance and availability of alternatives or new products

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