RN1117MFV,L3F | |
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Part Number | RN1117MFV,L3F |
Manufacturer | Toshiba Semiconductor and Storage |
Description | TRANS NPN PREBIAS 50V 100MA VESM |
Quantity Available | 2560 pcs new original in stock. Request Stock & Quotation |
ECAD Model | |
Datasheets | |
Download | RN1117MFV,L3F Details PDF |
RN1117MFV,L3F Price |
Request Price & Lead Time Online or Email us: Info@ariat-tech.com |
Technical Information of RN1117MFV,L3F | |||
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Manufacturer Part Number | RN1117MFV,L3F | Category | Discrete Semiconductor |
Manufacturer | Toshiba Semiconductor and Storage | Description | TRANS NPN PREBIAS 50V 100MA VESM |
Package / Case | Tape & Reel (TR) | Quantity Available | 2560 pcs |
Voltage - Collector Emitter Breakdown (Max) | 50V | Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
Transistor Type | NPN - Pre-Biased | Supplier Device Package | VESM |
Series | - | Resistor - Emitter Base (R2) | 4.7 kOhms |
Resistor - Base (R1) | 10 kOhms | Power - Max | 150mW |
Packaging | Tape & Reel (TR) | Package / Case | SOT-723 |
Other Names | RN1117MFVL3F | Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Manufacturer Standard Lead Time | 16 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Frequency - Transition | 250MHz |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VESM | DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
Current - Collector Cutoff (Max) | 500nA | Current - Collector (Ic) (Max) | 100mA |
Download | RN1117MFV,L3F PDF - DE.pdf |
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RN1117MFV,L3F Image | RN1117MFV,L3F Picture | RN1117MFV,L3F PDF | |||
RN1117MFV,L3F Datasheet | Download RN1117MFV,L3F Datasheet | Manufacturer Toshiba Semiconductor and Storage |
Related parts for RN1117MFV,L3F | |||||
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Image | Part Number | Description | Manufacturer | Get a Quote | |
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