RN1117MFV,L3F
Part Number RN1117MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Description TRANS NPN PREBIAS 50V 100MA VESM
Quantity Available 2560 pcs new original in stock.
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Technical Information of RN1117MFV,L3F
Manufacturer Part Number RN1117MFV,L3F Category Discrete Semiconductor
Manufacturer Toshiba Semiconductor and Storage Description TRANS NPN PREBIAS 50V 100MA VESM
Package / Case Tape & Reel (TR) Quantity Available 2560 pcs
Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Transistor Type NPN - Pre-Biased Supplier Device Package VESM
Series - Resistor - Emitter Base (R2) 4.7 kOhms
Resistor - Base (R1) 10 kOhms Power - Max 150mW
Packaging Tape & Reel (TR) Package / Case SOT-723
Other Names RN1117MFVL3F Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 16 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 250MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VESM DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA
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