1N5811US
Part Number 1N5811US
Manufacturer Microsemi
Description DIODE GEN PURP 150V 3A B-MELF
Quantity Available 2678 pcs new original in stock.
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Technical Information of 1N5811US
Manufacturer Part Number 1N5811US Category Discrete Semiconductor
Manufacturer Microsemi Description DIODE GEN PURP 150V 3A B-MELF
Package / Case Bulk Quantity Available 2678 pcs
Voltage - Forward (Vf) (Max) @ If 875mV @ 4A Voltage - DC Reverse (Vr) (Max) 150V
Supplier Device Package B, SQ-MELF Speed Fast Recovery = 200mA (Io)
Series - Reverse Recovery Time (trr) 30ns
Packaging Bulk Package / Case SQ-MELF, B
Operating Temperature - Junction -65°C ~ 175°C Mounting Type Surface Mount
Diode Type Standard Current - Reverse Leakage @ Vr 5µA @ 50V
Current - Average Rectified (Io) 3A Capacitance @ Vr, F 60pF @ 10V, 1MHz
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