APT10045JFLL
Part Number APT10045JFLL
Manufacturer Microchip Technology
Description MOSFET N-CH 1000V 21A ISOTOP
Quantity Available 3162 pcs new original in stock.
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Datasheets 1.APT10045JFLL.pdf2.APT10045JFLL.pdf3.APT10045JFLL.pdf4.APT10045JFLL.pdf
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Technical Information of APT10045JFLL
Manufacturer Part Number APT10045JFLL Category Discrete Semiconductor
Manufacturer Micrel / Microchip Technology Description MOSFET N-CH 1000V 21A ISOTOP
Package / Case ISOTOP® Quantity Available 3162 pcs
Vgs(th) (Max) @ Id 5V @ 2.5mA Technology MOSFET (Metal Oxide)
Supplier Device Package ISOTOP® Series POWER MOS 7®
Rds On (Max) @ Id, Vgs 460mOhm @ 11.5A, 10V Product Status Active
Package / Case SOT-227-4, miniBLOC Package Tube
Mounting Type Chassis Mount Input Capacitance (Ciss) (Max) @ Vds 4350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 154 nC @ 10 V FET Type N-Channel
FET Feature - Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc) Base Product Number APT10045
DownloadAPT10045JFLL PDF - DE.pdfAPT10045JFLL PDF - FR.pdfAPT10045JFLL PDF - ES.pdfAPT10045JFLL PDF - IT.pdfAPT10045JFLL PDF - KR.pdf

Manufacturer Part Number

APT10045JFLL

Description

This product is a high-voltage N-Channel MOSFET with a maximum drain-source voltage of 1000V and continuous drain current of 21A. It comes in the ISOTOP® chassis mount package (SOT-227-4, miniBLOC), suitable for power switching applications. The MOSFET employs advanced Power MOS 7® technology for improved efficiency and reliability. This specific item is new, original, and available from stock.

Specifications

N-Channel MOSFET

1000V drain-source voltage (Vdss max)

21A continuous drain current (at 25°C, when mounted to chassis)

Maximum on-resistance (Rds(on)) is 460mOhm at 11.5A, 10V gate-source voltage

Maximum gate threshold voltage (Vgs(th)) is 5V at 2.5mA

Maximum gate charge (Qg) is 154nC at 10V

Maximum input capacitance (Ciss) is 4350pF at 25V

Device supports RoHS3 compliance and is unaffected by REACH regulations

Moisture Sensitivity Level (MSL) is 1, suitable for unlimited handling in production environments

Active status, currently being manufactured and available for purchase

Device Structure

N-Channel enhancement-mode

Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

ISOTOP® package (SOT-227-4, miniBLOC) designed for high power and heat dissipation

Chassis-mountable device structure for secure and reliable integration into equipment

Four terminal points: Drain, Source, Gate, and base connection

Performance Characteristics

Handles high voltages and currents, ideal for fast switching and efficient power management

Low Rds(on), leading to reduced conduction losses and increased overall system efficiency

Large input capacitance, improving faster switching response

High gate charge enables effective operation in high-frequency environments

Stable performance at operating temperature and under heavy loads

High reliability due to advanced manufacturing process and package design

Application Environments

Used in industrial power supplies, motor drives, inverters, and switching power supplies

Suitable for renewable energy systems, such as solar power inverters and battery management

Robust enough for use in uninterruptible power supplies (UPS), welding equipment, and other heavy-duty electronics

Applicable for designs requiring high-voltage and high-current switching with reliable performance

Designed for environments requiring chassis mounting and durable, long-term operation

Selection Guidelines

Choose this model if you need a high-voltage (up to 1000V), high-current (up to 21A) N-Channel MOSFET

Ideal for designs demanding robust heat dissipation and reliable switching characteristics

Verify that your application's voltage and current requirements align with ratings

Consider the ISOTOP® package for superior mounting and thermal management

Check for RoHS3 and REACH compliance if environmental certifications are needed

Ensure your circuit can accommodate the high gate charge and input capacitance requirements

Usage Considerations

Device must be chassis-mounted for optimal thermal performance

Appropriate heat sinking is essential to manage power dissipation

Be mindful of gate drive requirements due to the high gate charge; ensure your driver circuit can handle it

Minimize over-voltage and over-current conditions to prevent device failure

Observe proper ESD handling and storage practices

Confirm that the entire circuit accommodates high input capacitance for desired switching speeds

Potential Equivalent/Replacement Models

There may be equivalent or alternative models with similar ratings in the APT series and from other manufacturers. Examples to consider:

APT10045JLL (similar series MOSFET, potentially with different pinout/package options)

IXYS IXFH100N10, IXFN100N10 (check for exact volt/current compatibility and package)

Infineon IRFP100N10 (verify ratings and mounting compatibility)

Other manufacturers may have similar 1000V/20A MOSFETs in a comparable package; always confirm parameters and mechanical fit.

If no standard equivalents are found, contact Ariat-Tech’s sales team for the most up-to-date alternative options and professional advice.

APT10045JFLL are New and Original in Stock, Find APT10045JFLL electronics components stock, Datasheet, Inventory and Price at Ariat-Tech.com Online, Order APT10045JFLL Microchip Technology with warrantied and confidence from Ariat Technology Limitd. Ship via DHL/FedEx/UPS. Payment with Wire Transfer or PayPal is OK.
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