| APT10045JFLL | |
|---|---|
| Part Number | APT10045JFLL |
| Manufacturer | Microchip Technology |
| Description | MOSFET N-CH 1000V 21A ISOTOP |
| Quantity Available | 3162 pcs new original in stock. Request Stock & Quotation |
| Datasheets | 1.APT10045JFLL.pdf2.APT10045JFLL.pdf3.APT10045JFLL.pdf4.APT10045JFLL.pdf |
| Download | APT10045JFLL Details PDF |
| APT10045JFLL Price |
Request Price & Lead Time Online or Email us: Info@ariat-tech.com |
| Technical Information of APT10045JFLL | |||
|---|---|---|---|
| Manufacturer Part Number | APT10045JFLL | Category | Discrete Semiconductor |
| Manufacturer | Micrel / Microchip Technology | Description | MOSFET N-CH 1000V 21A ISOTOP |
| Package / Case | ISOTOP® | Quantity Available | 3162 pcs |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA | Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | ISOTOP® | Series | POWER MOS 7® |
| Rds On (Max) @ Id, Vgs | 460mOhm @ 11.5A, 10V | Product Status | Active |
| Package / Case | SOT-227-4, miniBLOC | Package | Tube |
| Mounting Type | Chassis Mount | Input Capacitance (Ciss) (Max) @ Vds | 4350 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 154 nC @ 10 V | FET Type | N-Channel |
| FET Feature | - | Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) | Base Product Number | APT10045 |
| Download | APT10045JFLL PDF - DE.pdfAPT10045JFLL PDF - FR.pdfAPT10045JFLL PDF - ES.pdfAPT10045JFLL PDF - IT.pdfAPT10045JFLL PDF - KR.pdf | ||
APT10045JFLL
This product is a high-voltage N-Channel MOSFET with a maximum drain-source voltage of 1000V and continuous drain current of 21A. It comes in the ISOTOP® chassis mount package (SOT-227-4, miniBLOC), suitable for power switching applications. The MOSFET employs advanced Power MOS 7® technology for improved efficiency and reliability. This specific item is new, original, and available from stock.
N-Channel MOSFET
1000V drain-source voltage (Vdss max)
21A continuous drain current (at 25°C, when mounted to chassis)
Maximum on-resistance (Rds(on)) is 460mOhm at 11.5A, 10V gate-source voltage
Maximum gate threshold voltage (Vgs(th)) is 5V at 2.5mA
Maximum gate charge (Qg) is 154nC at 10V
Maximum input capacitance (Ciss) is 4350pF at 25V
Device supports RoHS3 compliance and is unaffected by REACH regulations
Moisture Sensitivity Level (MSL) is 1, suitable for unlimited handling in production environments
Active status, currently being manufactured and available for purchase
N-Channel enhancement-mode
Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
ISOTOP® package (SOT-227-4, miniBLOC) designed for high power and heat dissipation
Chassis-mountable device structure for secure and reliable integration into equipment
Four terminal points: Drain, Source, Gate, and base connection
Handles high voltages and currents, ideal for fast switching and efficient power management
Low Rds(on), leading to reduced conduction losses and increased overall system efficiency
Large input capacitance, improving faster switching response
High gate charge enables effective operation in high-frequency environments
Stable performance at operating temperature and under heavy loads
High reliability due to advanced manufacturing process and package design
Used in industrial power supplies, motor drives, inverters, and switching power supplies
Suitable for renewable energy systems, such as solar power inverters and battery management
Robust enough for use in uninterruptible power supplies (UPS), welding equipment, and other heavy-duty electronics
Applicable for designs requiring high-voltage and high-current switching with reliable performance
Designed for environments requiring chassis mounting and durable, long-term operation
Choose this model if you need a high-voltage (up to 1000V), high-current (up to 21A) N-Channel MOSFET
Ideal for designs demanding robust heat dissipation and reliable switching characteristics
Verify that your application's voltage and current requirements align with ratings
Consider the ISOTOP® package for superior mounting and thermal management
Check for RoHS3 and REACH compliance if environmental certifications are needed
Ensure your circuit can accommodate the high gate charge and input capacitance requirements
Device must be chassis-mounted for optimal thermal performance
Appropriate heat sinking is essential to manage power dissipation
Be mindful of gate drive requirements due to the high gate charge; ensure your driver circuit can handle it
Minimize over-voltage and over-current conditions to prevent device failure
Observe proper ESD handling and storage practices
Confirm that the entire circuit accommodates high input capacitance for desired switching speeds
There may be equivalent or alternative models with similar ratings in the APT series and from other manufacturers. Examples to consider:
APT10045JLL (similar series MOSFET, potentially with different pinout/package options)
IXYS IXFH100N10, IXFN100N10 (check for exact volt/current compatibility and package)
Infineon IRFP100N10 (verify ratings and mounting compatibility)
Other manufacturers may have similar 1000V/20A MOSFETs in a comparable package; always confirm parameters and mechanical fit.
If no standard equivalents are found, contact Ariat-Tech’s sales team for the most up-to-date alternative options and professional advice.
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| APT10045JFLL Image | APT10045JFLL Picture | APT10045JFLL PDF | |||
| APT10045JFLL Datasheet | Download APT10045JFLL Datasheet | Manufacturer Micrel / Microchip Technology | |||
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