EMD12FHAT2R
Part Number EMD12FHAT2R
Manufacturer LAPIS Semiconductor
Description PNP+NPN DIGITAL TRANSISTOR (CORR
Quantity Available 2593 pcs new original in stock.
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Datasheets 1.EMD12FHAT2R.pdf2.EMD12FHAT2R.pdf
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Technical Information of EMD12FHAT2R
Manufacturer Part Number EMD12FHAT2R Category Discrete Semiconductor
Manufacturer LAPIS Semiconductor Description PNP+NPN DIGITAL TRANSISTOR (CORR
Package / Case Cut Tape (CT) Quantity Available 2593 pcs
Voltage - Collector Emitter Breakdown (Max) - Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) Supplier Device Package EMT6
Series Automotive, AEC-Q101 Resistor - Emitter Base (R2) 47 kOhms
Resistor - Base (R1) 47 kOhms Power - Max 150mW
Packaging Cut Tape (CT) Package / Case SOT-563, SOT-666
Other Names EMD12FHAT2RCT Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 7 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 250MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 250MHz 150mW Surface Mount EMT6 DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V
Current - Collector Cutoff (Max) - Current - Collector (Ic) (Max) 100mA
DownloadEMD12FHAT2R PDF - DE.pdf
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