SI8481DB-T1-E1
Part Number SI8481DB-T1-E1
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CH 20V 9.7A 4-MICROFOOT
Quantity Available 2571 pcs new original in stock.
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Technical Information of SI8481DB-T1-E1
Manufacturer Part Number SI8481DB-T1-E1 Category Discrete Semiconductor
Manufacturer Electro-Films (EFI) / Vishay Description MOSFET P-CH 20V 9.7A 4-MICROFOOT
Package / Case Tape & Reel (TR) Quantity Available 2571 pcs
Vgs(th) (Max) @ Id 900mV @ 250µA Vgs (Max) ±8V
Technology MOSFET (Metal Oxide) Supplier Device Package 4-MICRO FOOT® (1.6x1.6)
Series TrenchFET® Gen III Rds On (Max) @ Id, Vgs 21 mOhm @ 3A, 4.5V
Power Dissipation (Max) 2.8W (Tc) Packaging Tape & Reel (TR)
Package / Case 4-UFBGA Other Names SI8481DB-T1-E1TR
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 10V Gate Charge (Qg) (Max) @ Vgs 47nC @ 4.5V
FET Type P-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Drain to Source Voltage (Vdss) 20V
Detailed Description P-Channel 20V 9.7A (Tc) 2.8W (Tc) Surface Mount 4-MICRO FOOT® (1.6x1.6) Current - Continuous Drain (Id) @ 25°C 9.7A (Tc)
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