SI4966DY-T1-E3
Part Number SI4966DY-T1-E3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET 2N-CH 20V 8SOIC
Quantity Available 22268 pcs new original in stock.
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Technical Information of SI4966DY-T1-E3
Manufacturer Part Number SI4966DY-T1-E3 Category Discrete Semiconductor
Manufacturer Electro-Films (EFI) / Vishay Description MOSFET 2N-CH 20V 8SOIC
Package / Case Tape & Reel (TR) Quantity Available 22268 pcs
Vgs(th) (Max) @ Id 1.5V @ 250µA Supplier Device Package 8-SO
Series TrenchFET® Rds On (Max) @ Id, Vgs 25 mOhm @ 7.1A, 4.5V
Power - Max 2W Packaging Tape & Reel (TR)
Package / Case 8-SOIC (0.154", 3.90mm Width) Other Names SI4966DY-T1-E3-ND
SI4966DY-T1-E3TR
SI4966DYT1E3
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds - Gate Charge (Qg) (Max) @ Vgs 50nC @ 4.5V
FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V Detailed Description Mosfet Array 2 N-Channel (Dual) 20V 2W Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C - Base Part Number SI4966
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