SI3900DV-T1-GE3
Part Number SI3900DV-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET 2N-CH 20V 2A 6-TSOP
Quantity Available 21843 pcs new original in stock.
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Technical Information of SI3900DV-T1-GE3
Manufacturer Part Number SI3900DV-T1-GE3 Category Discrete Semiconductor
Manufacturer Electro-Films (EFI) / Vishay Description MOSFET 2N-CH 20V 2A 6-TSOP
Package / Case Tape & Reel (TR) Quantity Available 21843 pcs
Vgs(th) (Max) @ Id 1.5V @ 250µA Supplier Device Package 6-TSOP
Series TrenchFET® Rds On (Max) @ Id, Vgs 125 mOhm @ 2.4A, 4.5V
Power - Max 830mW Packaging Tape & Reel (TR)
Package / Case SOT-23-6 Thin, TSOT-23-6 Other Names SI3900DV-T1-GE3TR
SI3900DVT1GE3
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 33 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds -
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V
Detailed Description Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP Current - Continuous Drain (Id) @ 25°C 2A
Base Part Number SI3900  
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