NSBA123JDXV6T1G
Part Number NSBA123JDXV6T1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS 2PNP PREBIAS 0.5W SOT563
Quantity Available 40296 pcs new original in stock.
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ECAD Model
Datasheets NSBA123JDXV6T1G.pdf
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Technical Information of NSBA123JDXV6T1G
Manufacturer Part Number NSBA123JDXV6T1G Category Discrete Semiconductor
Manufacturer AMI Semiconductor / ON Semiconductor Description TRANS 2PNP PREBIAS 0.5W SOT563
Package / Case Tape & Reel (TR) Quantity Available 40296 pcs
Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Transistor Type 2 PNP - Pre-Biased (Dual) Supplier Device Package SOT-563
Series - Resistor - Emitter Base (R2) 47 kOhms
Resistor - Base (R1) 2.2 kOhms Power - Max 500mW
Packaging Tape & Reel (TR) Package / Case SOT-563, SOT-666
Other Names NSBA123JDXV6T1GOS
NSBA123JDXV6T1GOS-ND
NSBA123JDXV6T1GOSTR
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition - Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA Base Part Number NSBA1*
DownloadNSBA123JDXV6T1G PDF - DE.pdfNSBA123JDXV6T1G PDF - FR.pdfNSBA123JDXV6T1G PDF - ES.pdfNSBA123JDXV6T1G PDF - IT.pdfNSBA123JDXV6T1G PDF - KR.pdf
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