MUN5216DW1T1G
Part Number MUN5216DW1T1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS 2NPN PREBIAS 0.25W SOT363
Quantity Available 2960 pcs new original in stock.
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ECAD Model
Datasheets MUN5216DW1T1G.pdf
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Technical Information of MUN5216DW1T1G
Manufacturer Part Number MUN5216DW1T1G Category Discrete Semiconductor
Manufacturer AMI Semiconductor / ON Semiconductor Description TRANS 2NPN PREBIAS 0.25W SOT363
Package / Case Tape & Reel (TR) Quantity Available 2960 pcs
Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Transistor Type 2 NPN - Pre-Biased (Dual) Supplier Device Package SC-88/SC70-6/SOT-363
Series - Resistor - Emitter Base (R2) -
Resistor - Base (R1) 4.7 kOhms Power - Max 250mW
Packaging Tape & Reel (TR) Package / Case 6-TSSOP, SC-88, SOT-363
Other Names MUN5216DW1T1G-ND
MUN5216DW1T1GOSTR
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 40 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition -
Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363 DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA
Base Part Number MUN52**DW1T  
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