FQB9N50TM
Part Number FQB9N50TM
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 500V 9A D2PAK
Quantity Available 5000 pcs new original in stock.
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Datasheets FQB9N50TM.pdf
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Technical Information of FQB9N50TM
Manufacturer Part Number FQB9N50TM Category Discrete Semiconductor
Manufacturer AMI Semiconductor / ON Semiconductor Description MOSFET N-CH 500V 9A D2PAK
Package / Case Tape & Reel (TR) Quantity Available 5000 pcs
Vgs(th) (Max) @ Id 5V @ 250µA Vgs (Max) ±30V
Technology MOSFET (Metal Oxide) Supplier Device Package D²PAK (TO-263AB)
Series QFET® Rds On (Max) @ Id, Vgs 730 mOhm @ 4.5A, 10V
Power Dissipation (Max) 3.13W (Ta), 147W (Tc) Packaging Tape & Reel (TR)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 1450pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 500V Detailed Description N-Channel 500V 9A (Tc) 3.13W (Ta), 147W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C 9A (Tc)  
DownloadFQB9N50TM PDF - DE.pdfFQB9N50TM PDF - FR.pdfFQB9N50TM PDF - ES.pdfFQB9N50TM PDF - IT.pdfFQB9N50TM PDF - KR.pdf
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