FCP11N60F
Part Number FCP11N60F
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 600V 11A TO-220
Quantity Available 22997 pcs new original in stock.
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Datasheets FCP11N60F.pdf
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Technical Information of FCP11N60F
Manufacturer Part Number FCP11N60F Category Discrete Semiconductor
Manufacturer AMI Semiconductor / ON Semiconductor Description MOSFET N-CH 600V 11A TO-220
Package / Case Tube Quantity Available 22997 pcs
Vgs(th) (Max) @ Id 5V @ 250µA Vgs (Max) ±30V
Technology MOSFET (Metal Oxide) Supplier Device Package TO-220-3
Series SuperFET™ Rds On (Max) @ Id, Vgs 380 mOhm @ 5.5A, 10V
Power Dissipation (Max) 125W (Tc) Packaging Tube
Package / Case TO-220-3 Other Names FCP11N60F-ND
FCP11N60FFS
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 52 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 1490pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V Detailed Description N-Channel 600V 11A (Tc) 125W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C 11A (Tc)  
DownloadFCP11N60F PDF - DE.pdfFCP11N60F PDF - FR.pdfFCP11N60F PDF - ES.pdfFCP11N60F PDF - IT.pdfFCP11N60F PDF - KR.pdf
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