STMicroelectronics boosts SiC wafer capacity, STMicroelectronics completes acquisition of Norstel AB

Yesterday (2), STMicroelectronics announced that it has completed the overall acquisition of Swedish silicon carbide (SiC) wafer maker Norstel AB ("Norstel"). After the first transaction was announced in February 2019, STMicroelectronics exercised its options and acquired the remaining 45% of its shares. Norstel's acquisitions totaled $ 137.5 million and were paid in cash.

It is understood that Norstel will be fully integrated into ST's global R & D and manufacturing business, and continue to develop 150mm silicon carbide die and epitaxial wafer production business to develop 200mm wafers and a wider range of wide band gap materials.

Norstel was spun off from Linköping University in 2005 to develop and produce 150mm SiC bare wafers and epitaxial wafers. ST said that after the transaction is completed, it will control part of the entire supply chain of SiC devices and bring an important growth opportunity for itself with limited global capacity.

It can be said that the acquisition is another response made by ST under the shortage of SiC wafer capacity. At the beginning of this year, ST signed a multi-year supply agreement with Cree. During the current significant increase in demand for the SiC power device market, Cree will supply STMicroelectronics with US $ 250 million of Cree's advanced 150mm SiC bare wafers and epitaxial wafers . This is also the third multi-year supply agreement signed by ST since 2018.

In December 2016, Norstel was acquired by Anxin Investment.

It is understood that compound semiconductors, as the next generation of key semiconductor materials, are of great significance in many aspects such as communications, energy, automotive electronics, etc. The realization of compound semiconductor epitaxial wafers and chip manufacturing capabilities will effectively enhance independent controllable capabilities. SiC is recognized as "a material of the future" in the semiconductor industry, and it is a new type of semiconductor material with broad development potential in the new century.

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