Texas Instruments LMG3100R0x GaN FETs with Integrated Drivers

Texas Instruments LMG3100R0x Gallium Nitride (GaN) FETs with Integrated Drivers are 1.7mΩ GaN FETs and drivers with a high-side level shifter and bootstrap. Two LGM3100 devices can be used to form a half-bridge with no external level shifter required. The GaN FET and driver components feature built-in supply rail under-voltage lock-out (UVLO) protection and internal bootstrap supply voltage clamping capability to prevent overdrive (>5.4V). Texas Instruments LMG3100R0x offers low power consumption and an improved user interface. The LMG3100R017 is an ideal solution for high-frequency, high-efficiency applications, including buck-boost converters, LLC converters, solar inverters, telecom, motor drives, power tools, and Class D audio amplifiers.

FEATURES

•Integrated 1.7mΩ (LMG3100R017) or 4.4mΩ (LMG3100R044) GaN FET/driver

•100V continuous, 120V pulsed voltage rating

•Interated high-side level shift and bootstrap

•Two LMG3100 can form a half-bridge, no external level shifter needed

•5V external bias power supply

•Supports 3.3V and 5V input logic levels

•High slew rate switching with low ringing

•Gate driver capable of up to 10MHz switching

•Internal bootstrap supply voltage clamping to prevent GaN FET overdrive

•Supply rail undervoltage lockout protection

•Low power consumption

•Package optimized for easy PCB layout

•Exposed top QFN package for top-side cooling

•Large exposed pads on the bottom for bottom-side cooling

•Zero reverse recovery

APPLICATIONS

•Buck, boost, and buck-boost converters

•LLC converters

•Solar inverters

•Telecom and server power

•Motor drives

•Power tools

•Class D audio amplifiers

SPECIFICATIONS

•90V continuous voltage rating

•100V pulsed voltage rating

•5V external bias power supply

•3.3V to 5V input logic levels

•6.5mm x 4mm x 0.89mm dimensions

SIMPLIFIED BLOCK DIAGRAM