The FF200R33KF2C from Infineon is a high-performance IGBT module designed for demanding high-voltage applications. It handles up to 3,300 V and 330 A, making it ideal for industrial drives and inverters. This article will discuss FF200R33KF2C overview, features, specifications, pdf datasheet and more.
The FF200R33KF2C is a high-performance IGBT module from Infineon, designed for high-voltage, high-current applications such as industrial motor drives and inverters. With a collector-emitter voltage rating of 3,300 V and a continuous collector current capacity of 200 A (330 A at 25°C), it handles demanding conditions efficiently. Its low saturation voltage (3.4 V) ensures minimal power loss, while the integrated freewheeling diode supports efficient operation. Robust isolation (6.0 kV RMS) and wide operating temperature range (-40°C to 125°C) make it highly reliable in harsh environments. With thermal resistance optimized for heat dissipation and a maximum power dissipation of 2.2 kW, this module offers exceptional performance and durability.
Whether you're designing industrial systems or upgrading power electronics, the FF200R33KF2C is a versatile solution. Choose the FF200R33KF2C today to power your applications with reliability and efficiency—available now!
- Enables efficient operation in high-voltage applications
- Supports high current loads with reliability
- Minimizes power losses during conduction
- Simplifies circuit design with integrated diode
- Ensures safety and reliability in demanding environments
- Facilitates effective heat dissipation
- Operates effectively across a wide temperature range
Specification |
Value |
Collector-Emitter Voltage |
3,300 V |
Continuous Collector Current |
200 A at case temperature of 80°C; 330 A at 25°C |
Collector-Emitter Saturation Voltage |
3.4 V typical at 25°C |
Gate-Emitter Voltage |
±20 V maximum |
Total Power Dissipation |
2.2 kW at case temperature of 25°C |
Operating Junction Temperature Range |
-40°C to 125°C |
Thermal Resistance (Junction to Case) |
57.0 K/kW per IGBT; 108 K/kW per diode |
Isolation Test Voltage |
6.0 kV RMS for 1 minute |
Module Stray Inductance |
58 nH |
Package Dimensions |
140 mm (Length) x 73 mm (Width) x 38 mm (Height) |
- Industrial motor drives
- Inverters for renewable energy systems
- Electric vehicle powertrains
- Rail traction systems
- Power management applications
- Industrial automation equipment
- Energy storage systems
- Electric propulsion systems
The circuit diagram for the FF200R33KF2C module depicts a half-bridge IGBT (Insulated Gate Bipolar Transistor) configuration with integrated freewheeling diodes. The two IGBTs, G1 and G2, are shown in a symmetrical arrangement, connected between the high-side collector (C1) and low-side emitter (E2). The intermediate node, C2/E1, serves as a connection point between the emitter of the high-side IGBT and the collector of the low-side IGBT.
Each IGBT is accompanied by a parallel diode, which acts as a freewheeling diode, facilitating current flow during switching operations to protect the transistors from voltage spikes and ensure smooth operation in AC circuits. The gate terminals (G1 and G2) are used to control the switching of the respective IGBTs, while the other terminals (C1, E2, C2/E1) provide the power connections.
The image illustrates the packaging dimensions and mounting details for the FF200R33KF2C power module. The module's physical layout includes a compact and robust design with precise dimensional specifications to ensure compatibility with various mounting and system configurations.
The top view shows the spacing of key terminals, including E1/C2, C1, and E2, designed for secure electrical connections. The base dimensions are clearly marked, with the module width measuring 73 mm and the height at 38 mm, providing a low-profile design suitable for compact installations.
The side view highlights the screw mounting holes with a maximum screwing depth of 16 mm, ensuring firm attachment to heat sinks or other surfaces. The spacing between screw holes is precisely detailed to support proper alignment during installation. The terminal heights are designed for easy access, while the base provides clearance for thermal management and electrical insulation.
Infineon's FF200R33KF2C module delivers reliable and efficient performance for power management in industrial and energy systems. With its ability to handle high currents and voltages while minimizing energy loss, it is a crucial component for enhancing the functionality and sustainability of power systems in various applications.
2024-12-13
2024-12-13
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